Samsung 990 EVO Plus 1TB (MZ-V9S1T0BW)

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M. 2 1TB Samsung 990 EVO Plus NVMe PCIe 5.0 x 2

SAMSUNG SSD 990 EVO Plus 1TB M. 2 NVMe PCIeSAMSUNG SSD 990 EVO Plus 1TB M. 2 NVMe PCIe:Manufacturer : SAMSUNGManufacturer Part No : MZ-V9S1T0BWMarketing DescriptionThe Samsung 990 EVO Plus is an internal solid state drive designed for demanding applications. With a robust capacity of 1 TB, it ensures ample storage for a variety of files and applications. The drive utilizes PCI Express 5.0 and boasts internal data rates of up to 7150 MBps, allowing for quick data retrieval and minimal load times. Samsung’s V-NAND TLC Technology enhances performance and endurance, making it suitable for both everyday computing and intensive tasks. This drive is engineered to withstand a range of environmental conditions, operating effectively in temperatures from 0°C to 70°C and withstanding storage temperatures as low as -40°C and as high as 85°C. It features TRIM support and an Auto Garbage Collection Algorithm, ensuring optimal performance over time. Security is prioritized with hardware encryption and compliance with TCG Opal Encryption 2.0, safeguarding data against unauthorized access. Product Features

• High-speed performance
  With an internal data rate of 7150 MBps and write speeds up to 6300 MBps, the Samsung 990 EVO Plus delivers fast read and write capabilities, essential for power users and gamers.
• Robust durability
  Designed to operate in harsh environments, this SSD can withstand temperatures from -40°C to 85°C, ensuring reliability in various conditions.
• Advanced security
  The drive features 256-bit AES hardware encryption, keeping data secure through TCG Opal Encryption 2.0, allowing users to have peace of mind about their sensitive information.
• Efficient power consumption
  Operating at low power levels, including 5 mW during read mode and 4.2 watts in sleep mode, this drive is efficient, contributing to overall energy savings.
• Enhanced technology features
  Equipped with Intelligent TurboWrite Technology and Host Memory Buffer (HMB), this SSD provides faster performance and improved efficiency for all applications.

GeneralDevice Type : Solid state drive - internalCapacity : 1 TBHardware Encryption : YesEncryption Algorithm : 256-bit AESNAND Flash Memory Type : Triple-level cell (TLC)Form Factor : M. 2 2280Interface : PCIe 5.0 x2 (NVMe)Features : Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S. M. A. R. T. , IEEE 1667Width : 22.15 mmDepth : 80.15 mmHeight : 2.38 mmWeight : 9 gPerformanceInternal Data Rate : 7150 MBps (read) / 6300 MBps (write)Maximum 4KB Random Write : 1350000 IOPSMaximum 4KB Random Read : 850000 IOPSReliabilityMTBF : 1.500. 000 hoursExpansion & ConnectivityCompatible Bay : M. 2 2280PowerPower Consumption : 4.3 Watt (read)
4.2 Watt (write)
60 mW (standby)
5 mW (sleep)Software & System RequirementsSoftware Included : Samsung Magician SoftwareMiscellaneousEnclosure Material : Nickel coatingManufacturer WarrantyService & Support : Limited warranty - 5 years / 600 TBWEnvironmental ParametersMin Operating Temperature : 0 °CMax Operating Temperature : 70 °CShock Tolerance (non-operating) : 1500 g @ 0.5 msVibration Tolerance (non-operating) : 20 g @ 20-2000 HzTechnical data provided by third party. We assume no liability for errors within these data.
SAMSUNG

 

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