Samsung 990 EVO Plus 4TB (MZ-V9S4T0BW)

SAMSUNG SSD 990 EVO Plus 4TB M. 2 NVMe PCIeSAMSUNG SSD 990 EVO Plus 4TB M. 2 NVMe PCIe:Manufacturer : SAMSUNGManufacturer Part No : MZ-V9S4T0BWMarketing DescriptionThe Samsung 990 EVO Plus is a powerful internal solid state drive designed to enhance storage performance with a 2 TB capacity. Featuring Samsung V-NAND TLC Technology, this drive ensures high-speed data transfer with an internal data rate of 7250 MBps and a write speed of 6300 MBps, enabling seamless operation for demanding applications and large file management. With support for PCI Express 4.0 and 5.0 interfaces, it meets various system requirements while offering speed and reliability.
Designed with advanced features such as Intelligent TurboWrite Technology and an Auto Garbage Collection Algorithm, the Samsung 990 EVO Plus maintains efficiency and durability even under heavy workloads. Its shock and vibration resistance capability of up to 1500 g and a temperature range from -40°C to 85°C makes it suitable for both consumer and professional environments. This SSD ensures quick data access and provides hardware encryption for enhanced security, making it an ideal choice for users looking to upgrade system performance. Product Features

• Efficient data transfer
  With internal data rates reaching up to 7250 MBps, data can be transferred swiftly, enabling faster boot times and quicker application load speeds.
• High durability
  Featuring a shock resistance of up to 1500 g and a vibration tolerance, this drive is rugged enough to withstand physical stress, ensuring reliable operation in various environments.
• Advanced performance management
  Supports TRIM, Auto Garbage Collection, and Device Sleep to optimize performance and extend the lifespan of the drive, making it suitable for both everyday use and demanding applications.
• Enhanced security features
  Equipped with 256-bit AES hardware encryption and TCG Opal Encryption 2.0, the drive provides robust security measures to protect sensitive data from unauthorized access.

GeneralDevice Type : Solid state drive - internalCapacity : 4 TBHardware Encryption : YesEncryption Algorithm : 256-bit AESNAND Flash Memory Type : Triple-level cell (TLC)Form Factor : M. 2 2280Interface : PCIe 5.0 x2 (NVMe)Features : Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S. M. A. R. T. , IEEE 1667Width : 22.15 mmDepth : 80.15 mmHeight : 2.38 mmWeight : 9 gPerformanceInternal Data Rate : 7250 MBps (read) / 6300 MBps (write)Maximum 4KB Random Write : 1400000 IOPSMaximum 4KB Random Read : 1050000 IOPSReliabilityMTBF : 1.500. 000 hoursExpansion & ConnectivityCompatible Bay : M. 2 2280PowerPower Consumption : 5.5 Watt (read)
4.8 Watt (write)
60 mW (standby)
5 mW (sleep)Software & System RequirementsSoftware Included : Samsung Magician SoftwareMiscellaneousEnclosure Material : Nickel coatingDimensions & Weight (Shipping)Shipping Width : 9.9 cmShipping Depth : 2.29 cmShipping Height : 14.2 cmManufacturer WarrantyService & Support : Limited warranty - 5 years / 2400 TBWEnvironmental ParametersMin Operating Temperature : 0 °CMax Operating Temperature : 70 °CMin Storage Temperature : -40 °CMax Storage Temperature : 85 °CHumidity Range Operating : 5 - 95% (non-condensing)Shock Tolerance (non-operating) : 1500 g @ 0.5 msVibration Tolerance (non-operating) : 20 g @ 20-2000 HzTechnical data provided by third party. We assume no liability for errors within these data.
SAMSUNG

 

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